Profiling of Ge(X)Si(1-X)/Si strained-layer superlattices by large-angle convergent-beam electron diffraction and electron holography

Large-angle convergent-beam electron diffraction (LACBED) is suitable to reveal information on local strain and misfit stress relaxation of GexSi1-x/Si strained-layer superlattices (SLS) because the diffraction lines are sensitively dependent on small changes of the spacing between lattice planes. We shall demonstrate that the line shifts in a cross-sectional specimen caused by the effects of misfit strain and stress relaxation can be separated. An electron hologramtaken from a GexSi1-x/Si SLS is also presented as a preliminary result.