The detection of strain within InP-InGaAs single quantum well structures using large-angle convergent-beam electron diffraction

Publication Type

Conference Paper

Year of Publication

1991

Authors

Jordan IK
Grigorieff N
Cherns D
Hockly M
Spurdens PC
Aylett MR
Scott EG

Refereed Designation

Refereed

Journal

Institute of Physics Conference Series

Volume

117

Pagination

563-568

ISSN

0951-3248

Accession Number

ISI:A1991HJ30700110

Citation Key

96

Abstract

The large angle convergent beam electron diffraction technique has been used to obtain rocking curves from MOVPE and MBE grown InP-In.53Ga.47As single quantum well samples. Reflections sensitive to strain within the well layer were studied. From analysis of the curves an estimate of the mean strain present within the well in the samples has been made. Strains as low as 1.2.10(-3) have been measured. Plan-view specimens were used, reducing the problem of surface relaxation effects often encountered in thin cross-sectioned foils.